半导体结构的形成方法发明专利
申请号：CN201510293278.7
LOC分类号:H01L21/768
IPC结构图谱：
- C化学；冶金
- C0化学
- C08有机高分子化合物；其制备或化学加工；以其为基料的组合物
- C08B多糖类；其衍生物（含少于6个相互以配糖连接的糖键基团的多糖入missing translation to ZH：Fulltext...missing translation to ZH：Hierarchy...missing translation to ZH：Expanded...C07H；发酵或用酶方法入missing translation to ZH：Fulltext...missing translation to ZH：Hierarchy...missing translation to ZH：Expanded...C12P 19/00；missing translation to ZH：Fulltext...missing translation to ZH：Hierarchy...missing translation to ZH：Expanded...纤维素生产入missing translation to ZH：Fulltext...missing translation to ZH：Hierarchy...missing translation to ZH：Expanded...D21）〔4〕
- C08B37/00不包括在C08B 1/00至C08B 35/00组内的多糖类的制备；其衍生物（纤维素入D21）〔4〕
- C08B37/08壳质多糖；硫酸软骨素；透明质酸；它们的衍生物〔2〕
